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| IGC70T120T6RL IGBT4 Low Power Chip FEATURES: * 1200V Trench + Field Stop technology * low switching losses * positive temperature coefficient * easy paralleling This chip is used for: * low / medium power modules C Applications: * low / medium power drives G E Chip Type IGC70T120T6RL VCE 1200V ICn 75A Die Size 9.12 x 7.71 mm 2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.12 x 7.71 7.61 x 6.24 1.31 x 0.81 70.3 / 51.6 115 150 90 200 Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500m 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm grd mm 2 Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673C, Edition 1, 31.10.2007 IGC70T120T6RL MAXIMUM RATINGS Parameter Collector-Emitter voltage , T j=25 C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate -Emitter voltage Operating junction temperature Short circuit data 2 ) V GE = 15V, V CC = 800V, Tvj = 150C Reverse bias safe operating area 2 ) (RBSOA) 1) 2) Symbol VC E IC Ic p u l s VG E Tj tp Value 1200 1) Unit V A A V C s 225 20 -40 ... +175 10 IC max = 150A, VCE max = 1200V, Tvj max= 150C depending on thermal properties of assembly not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 C Parameter Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min. VGE=0V , I C= 3 m A VGE=15V, IC=75 A IC =3mA , VGE =VCE VCE=1200V , VGE =0V VC E=0V , VGE =20V 10 1200 1.6 5.0 1.85 5.8 2.1 6.5 10 600 A nA V Value typ. max. Unit ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization) Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol C iss C oss C rss Conditions VC E = 2 5 V , V GE =0V, f=1MHz Value min. typ. 4400 290 235 pF max. Unit Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673C, Edition 1, 31.10.2007 IGC70T120T6RL SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design /characterization) Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) Symbol td ( o n ) tr td ( o f f ) tf Conditions 1) T j = 1 2 5C VC C =600V, I C =75 A, V GE =- 1 5 / 1 5 V , R G= - - - Value min. typ. tbd tbd max. Unit ns tbd tbd values also influenced by parasitic L- and C- in measurement and package. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673C, Edition 1, 31.10.2007 IGC70T120T6RL CHIP DRAWING Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673C, Edition 1, 31.10.2007 IGC70T120T6RL FURTHER ELECTRICAL CHARACTERISTICS This chip data sheet refers to the device data sheet tbd DESCRIPTION AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7673C, Edition 1, 31.10.2007 |
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